Self-Aligned InP DHBT with&amp;lt;tex&amp;gt;$f_tau$&amp;lt;/tex&amp;gt;and&amp;lt;tex&amp;gt;$f_max$&amp;lt;/tex&amp;gt;Over 300 GHz in a New Manufacturable Technology

He, Gang; Howard, J. K.; Le, Minh Vuong; Partyka, P.; Li, Bin; Kim, G.; Hess, R.; Bryie, R.; Lee, R.; Rustomji, S.; Pepper, Jane Wu; Kail, M.; Helix, M.J.; Elder, R.; Jansen, D.; Harff, N. E.; Prairie, J.F.; Daniel, Erik S.; Gilbert, Barry K.

doi:10.1109/led.2004.832528

Cited by 56 publications

(13 citation statements)

References 9 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…C OMPOSITION grading [1], [2] and the staggered lineup of the base-collector junction [3] are the methods of choice for the elimination of the energy barrier between the base and the collector in state of the art InP-GaInAs-InP double heterojunction bipolar transistors (DHBTs). Elimination of the barrier by doping is an alternative method.…”

Section: Introductionmentioning

confidence: 99%

An abrupt InP-GaInAs-InP DHBT

Elias

Kraus

Gavrilov

et al. 2005

IEEE Electron Device Lett.

View full text Add to dashboard Cite

We report on the performance of abrupt InP-GaInAs-InP double heterojunction bipolar transistors (DHBTs) with a thin heavily doped n-type InP layer at the base-collector interface. The energy barrier between the base and the collector was fully eliminated by a 4-nm-thick silicon doped layer with = 3 10 19 cm 3 . The obtainedand MAX values at a current density of 1 mA/ m 2 are comparable to the values reported for DHBTs with a grade layer between the base and the collector.

show abstract

Section: Introductionmentioning

confidence: 99%

An abrupt InP-GaInAs-InP DHBT

Elias

Kraus

Gavrilov

et al. 2005

IEEE Electron Device Lett.

View full text Add to dashboard Cite

show abstract

“…Scaled HBT dimensions and layer thickness enabled a current gain cutoff frequency as high as 509 GHz [3]. Vitesse has offered a commercial InP HBT foundry with a typical cutoff frequency of 300 GHz for their 0.35um transistors in Figure 5 [4]. The high speed operation of InP HBTs may be maintained over a wide range of current biases as shown in Figure 6.…”

Section: High Speed Iii-v Transistors: Hemts and Hbtsmentioning

confidence: 99%

Recent Advances in III-V Electronics

Chen¹,

Baeyens²,

Weimann³

et al. 2006

IEEE Custom Integrated Circuits Conference 2006

View full text Add to dashboard Cite

Compound III-V semiconductor circuits promise fast and power efficient analog, digital and mixed-mode applications. This paper will provide an overview of recent advances in high speed III-V compound devices and integrated circuits for high capacity wireless and optic fiber communications. Several critical compound semiconductor ASIC technologies and their unique performance advantages over prevailing silicon CMOS and SiGe technologies will be illustrated.

show abstract

“…InP/InGaAs/InP double heterojunction bipolar transistors (DHBTs) demonstrated a large current gain (b), high cut-off frequency (f T ) and maximum oscillation frequency (f max ) of over 300 GHz [1][2][3][4] and could be used in microwave RF and mixedsignal circuits. However, unresolved issues of InP/InGaAs DHBTs still remain such as a further increase in acceptor concentration in the p-type InGaAs base layer and further improvement of base-emitter and base-collector junctions.…”

Section: Introductionmentioning

confidence: 99%