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YBaCuO films of about 1 pm thickness have been deposited by Metal organic chemical vapor deposition (MOCVD) on biaxially textured Ni-based substrates. Different buffer layers (MgO, YSZ, CeOz), and also NiO epitaxially grown on Ni, have been tested with subsequent YBCO deposition in the same reactor. When using NiO as first buffer layer, Ni-based substrates were oxidized in a Rapid thermal processing system or in a conventional furnace previous to deposition of the second buffer layer. In the present work, we study different conductor architectures from the point of view of Tc, Jc(77K), epitaxial growth, and chemical stability of the structure.

The Fraunhofer Institute for Microelectronic Circuits and Systems (FhG-IMS) has developed spatial light modulators (SLM), which are used in a pattern generator for DUV laser mask writing developed by Micronic Laser Systems. They consist of micromirror arrays and allow massive parallel writing in UV mask writers. The chip discussed here consists of 2048 × 512 individually addressable mirrors and can be run at a frame rate of 1 to 2 kHz. For this application it is necessary that the SLMs can be operated under DUV light without changing their performance. This paper discusses a failure mechanism of the SLMs when operated in DUV light and countermeasures to eliminate this effect

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The Fraunhofer Institute for Photonic Microsystems (Fraunhofer IPMS) develops spatial light modulators (SLMs) based on arrays of tiltable micro mirrors on a semiconductor chip. Typical applications are pattern generation for deep UV-laser mask writing or structured illumination in microscopy. Development and optimization of such SLMs requires detailed knowledge of the device behaviour under operating conditions. Here, the flatness of each single mirror effects the image resolution and contrast of the generated pattern and is amongst others a characteristic property of SLMs. In this context a surface topography measurement under laser exposure (in situ) was designed. The interferometric setup uses the phase-shift principle and allows a resolution in z-direction in the single-digit nanometer range. During irradiation with UV-laser light at 248 nm (KrF) and energy densities of up to 20 mJ/cm 2 the change in single micro-mirrors topography was detected in situ. Measurements with varying pulse energies were carried out to identify an impact on the device performance. In general, the setup is neither limited to a specific illumination wavelength nor to micro-mirrors as structures under test