Articles you may be interested inTemperature distributions produced in an Nlayer film structure by static or scanning laser or electron beam with application to magnetooptical media Theory of transient temperature response of a twolayer system heated with a localized laser beam J. Appl. Phys. 60, 3417 (1986); 10.1063/1.337640Nonlinear calculation of a temperature profile produced in a twolayer structure by a scanning cw elliptical laser or electron beam J. Appl. Phys. 57, 965 (1985); 10.1063/1.334698Temperature profiles induced by a scanning cw laser beam Temperature distributions produced in semiconductors by a scanning elliptical or circular cw laser beamWe derive the Green's function solution to the heat equation for a two-layer structure and describe how to extend the technique to derive the Green's function for N-Iayer structures. The Green's function is applied to the interaction of a two-layer structure with scanning circular energy beams. The mathematics necessary to reduce the resultant solutions from a quintuple integral to a double integral are presented. Numerical integration of the remaining integrals leads to temperature profiles generated during laser irradiation of two-layer structures. These profiles are shown to reduce, in the appropriate limits, to previously reported profiles for the single-material case. Normalized linear temperature profiles as well as actual temperature profiles for silicon on sapphire are presented and discussed.PACS numbers: 79.20.0s 4357

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Abstract-Electrical characteristics of enhancement-mode n-and pchannel MOSFET's in 100-nm-thick silicon on sapphire (SOS) are reported. Channel mobilities (linear operation) of 500 and 200 cm2/V.s, respectively, have been measured in double solid phase epitaxially (DSPE) improved material. Deep trap levels associated with the Si-sapphire interface were measured in concentrations as low as 1 x 10" cm-*. These results indicate that DSPE-improved SOS films thinned to 100 nm are suitable for application to high-performance down-scaled CMOS circuitry.

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We present a model based on analytic solutions to the heat equation that calculates the temperature profiles induced by line shaped heat sources. The sensitivity of isotherms to various heating conditions including the effect of tailoring power profiles in both curved and straight sources is discussed. Conditions are presented that result in “dogboned” shaped isotherms. Also shown is the effect that inhomogeneities (e.g., power density fluctuations or defects in the material have on the ideal temperature profiles.