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and ZnTe substrates at35o'C with atmospheric pressure MOVPE. DiisoproWItelluride, dimethylzinc-triethylamine and diethylzinc were chosen as metallorganic precursors. The samples were characterized by photoluminescence at 2 K and the Hall effect. In the R spectra the light hole, heavy hole and bound exciton transitions are well resolved. Most of the transitions have been assigned. The partial pressure ratios of the alkyls were optimized. The influence of composition and stoichiometry of the substrates on the purity of the ZnTe is revealed. Various alkyls as sources of As, Bi, Ga. In and I were investigated for their suitability as p-or n-type dopants. It is shown that telraethylbiarsine and ethyliodide are promising alkyls for p-and n-type doping of ZnTe. Zinc telluride layers have been grown on (100) GaAs, GaSb I 54 671 @U Bumn 49 452 (in Japanese) Len. 14 151 Stare Commwa 2 157 Saminadayar K 1985J. Cyst. Gmwth 7.2 194 E p z q (London: Acadimic) " d e l R.

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Under an excitation density of 0.4 W/cm2, a strong biexcitonic peak was observed in the photoluminescence (PL) spectrum of a single quantum well which was grown in submonolayer deposition mode. Its intensity was found to increase superlinearly with excitation density. The shape of the biexcitonic peak was found to be similar to that of biexcitons in CuCl and CdS crystal and a binding energy of 9.8 meV was obtained. When the temperature increased from 10 to 31 K, the biexcitonic peak decreased considerably whereas the excitonic peak increased slightly.