The secondary electron (SE) yield, delta, was measured from 24 different elements at low primary beam energy (250-5,000 eV). Surface contamination affects the intensity of delta but not its variation with primary electron energy. The experiments suggest that the mean free path of SEs varies across the d bands of transition metals in agreement with theory. Monte Carlo simulations suggest that surface plasmons may need to be included for improved agreement with experiment.

The electron backscattering factor was measured from 24 different elements at low primary beam energy (250-5,000 eV). The results were compared with Monte Carlo simulations from a variety of freely available programs and an in-house developed program. The results suggest that a thin film of oxide can modify the backscattering factor at low primary energy. In addition, a number of problems have been identified with the freely available programs.

Summary:A method for scanning electron microscopy imaging of nonconductive specimens, based on measurement and utilisation of a critical energy, is described in detail together with examples of its application. The critical energy, at which the total electron yield curve crosses the unit level, is estimated on the basis of measurement of the image signal development from the beginning of irradiation. This approach, concentrated onto the detected signal as the only quantity crucial for the given purpose of acquiring a noncharged micrograph, evades consequences of any changes in an irradiated specimen that influence the total electron yield curve and possibly also the critical energy value. Implementation of the automated method, realised using a cathode lens-equipped scanning electron microsope (SEM), enables one to establish a mean rate of charging over the field of view and its dependence on the electron landing energy. This dependence enables one to determine the energy of a minimum damage of the image of the given field of view. Factors influencing reliability and applicability of the method are discussed and examples of noncharged micrographs of specimens from both life and material science fields are presented.

Signi®cant differences in backscattered electron (BSE) yields exist between the surfaces cleaned by methods used in electron microscopy and spectroscopy. These differences have been observed for Au, Cu and Al specimens, and are interpreted on the basis of simulated BSE yields. Composition and thickness of the surface contamination layers, responsible for the differences, are estimated. The results (7 nm of carbon on Au or 3 nm of oxide on Al) remain within expectation and indicate that the BSE yield measurements and BSE images should be interpreted cautiously. Peculiar results are obtained for Cu, perhaps due to a different cleaning procedure. A new concept of an information depth for the BSE signal is introduced as a depth within which the total BSE yield can be modelled as composed of the yields of layers proportional to their thickness weighted by the escape depths. This concept proved satisfactory for thin surface layers and brought the information depth values 2 to 4 times smaller than ®rst estimated, i.e. half the penetration depth.

Summary:A new design of secondary electron (SE) detector is described for use in low-vacuum scanning electron microscopes. Its distinguishing feature is a separate detector chamber, which can be maintained at a pressure independent of the pressure in the specimen chamber. The two chambers are separated by a perforated membrane or mesh across which an electric field is applied, making it relatively transparent to low-energy electrons but considerably less so to the gas molecules. The benefits of this arrangement are discussed. The final means of detecting the electrons can be a conventional scintillator and photomultiplier arrangement or any of the methods using the ambient gas as an amplifying medium. Images obtained with the detector show good SE contrast and low backscattered electron contribution.