In this paper, the impact of physical parameter variations on the electrical characteristics of III-V TFETs is investigated. The study is performed on the operations of two optimized ultra-thin 20nm double-gate transistors. The two device structures are InAs homojunction TFET and InAs-GaAs0.1Sb0.9 heterojunction TFET. The operation parameters are the ONcurrent, OFF-current, and threshold voltage. The investigation is performed at the device level, using a device simulator and the Monte-Carlo simulation approach is exploited to extract the distribution of electrical parameters in the presence of the process variation. The results reveal that the operation of the transistor is more sensitive to the doping of the source and gate work function compared to other physical parameters. Furthermore, the heterojunction TFETs show less sensitivity to physical parameter variations compared to the homojunction ones.

No abstract

No abstract

No abstract

No abstract