We study the nonlinear optical properties of graphene integrated onto Si3N4 waveguides under picosecond and subpicosecond pulsed excitation at telecom wavelength. Saturable absorption of graphene under guided-mode excitation is measured, and the temporal effects related to the photoexcited carrier dynamics in graphene are highlighted. Thereafter, a model of photoexcited carriers in graphene is implemented into the nonlinear Schrödinger equation in order to simulate the pulse propagation across the hybrid graphene/Si3N4 waveguide. This allows us to extract phenomenological parameters of graphene saturable absorption in chip-based devices, which could provide some guidelines for the design of nonlinear elements in photonic integrated circuits.

Coupling quantum emitters and nanostructures, in particular cold atoms and optical waveguides, has recently raised a large interest due to unprecedented possibilities of engineering light-matter interactions. In this work, we propose a new type of periodic dielectric waveguide that provides strong interactions between atoms and guided photons with an unusual dispersion. We design an asymmetric comb waveguide that supports a slow mode with a quartic (instead of quadratic) dispersion and an electric field that extends far into the air cladding for an optimal interaction with atoms. We compute the optical trapping potential formed with two guided modes at frequencies detuned from the atomic transition. We show that cold Rubidium atoms can be trapped as close as 100 nm from the structure in a 1.3-mK-deep potential well. For atoms trapped at this position, the emission into guided photons is largely favored, with a beta factor as high as 0.88 and a radiative decay rate into the slow mode 10 times larger than the free-space decay rate. These figures of merit are obtained at a moderately low group velocity of c/50.

We exploit slow light (high ng) modes in planar photonic crystals in order to design a compact cavity, which provides an attractive path towards the miniaturization of near-infrared integrated fast pulsed lasers. By applying dispersion engineering techniques, we can design structures with a low dispersion, as needed by mode-locking operation. Our basic InP SiO2 heterostructure is robust and well suited to integrated laser applications. We show that an optimized 30 μm long cavity design yields 9 frequency-equidistant modes with a FSR of 178 GHz within a 11.5 nm bandwidth, which could potentially sustain the generation of optical pulses shorter than 700 fs. In addition, the numerically calculated quality factors of these modes are all above 10,000, making them suitable for reaching laser operation. Thanks to the use of a high group index (28), this cavity design is almost one order of magnitude shorter than standard rib-waveguide based mode-locked lasers. The use of slow light modes in planar photonic crystal based cavities thus relaxes the usual constraints that tightly link the device size and the quality (peak power, repetition rate) of the pulsed laser signal.