No abstract

A new error model for a special class of multiport vector network analyzers (VNAs) is presented in this paper. This model can be applied to multiport network analyzers with noncomplete reflectometers, i.e., when the measurement of the incident waves at each port is not always available. The method used to compute the error coefficients proposed here is based on a compact and easy formulation. This method is an extension of the already existing general theory for complete reflectometer multiport network analyzers. Furthermore, the new error model generalizes the theory for three-sampler two-port VNAs. The proposed model has been tested against the complete reflectometer one and exhibits the same accuracy level.

We present a novel test set devised for nonlinear balanced device characterization using load-pull techniques. The system is capable of measuring the voltage and current waveforms at the calibration reference planes while independently tuning the device under test (DUT) source and load differential-and common-mode terminations. The test set is designed to address present and future large-signal multiport measurement needs, easing the characterization task while developing new multiport active devices.

A new W-band active load-pull system is presented. It is the first load-pull system to implement a 94 GHz load by means of an active loop exploiting frequency conversion techniques. The active loop configuration demonstrates a number of advantages that overcome the typical limitations of W-band passive tuners or conventional active open loop techniques in a cost effective way: load reflection coefficients ΓL as high as 0.95 in magnitude can be achieved at 94 GHz, thus providing a nearly full coverage of the Smith Chart. Possible applications of the setup include technology assessment, large-signal device model verification at sub-THz frequencies, and W-band MMIC design and characterization. The availability of direct and accurate load-pull measurements at W-band should prove an asset in the development of sub-THz integrated circuits. First measurements performed on high performance InP double heterojunction bipolar transistors (DHBTs) and GaN high electron mobility transistors (HEMTs) are presented.

No abstract