We report the first organic light-emitting field-effect transistor. The device structure comprises interdigitated gold source and drain electrodes on a Si/SiO(2) substrate. A polycrystalline tetracene thin film is vacuum sublimated on the substrate forming the active layer of the device. Both holes and electrons are injected from the gold contacts into this layer leading to electroluminescence from the tetracene. The output characteristics, transfer characteristics, and the optical emission properties of the device are reported. A possible mechanism for electron injection is suggested.

An ambipolar pentacene transistor with top-gold and top-calcium contacts has been realized by utilizing a parallactic shadow mask effect during vapor deposition. The pentacene deposited on top of a silicon dioxide gate insulator is doped by Ca at the pentacene/SiO2 interface in order to compensate electron traps. An equivalent circuit model based on a resistor-capacitor network has been developed to describe the basic electrical properties of the transistor. Shockley-like analytical expressions for the output and transfer characteristic, as well as an analytical expression for the potential and charge-carrier distribution in the channel, are derived under the assumption of a high electron-hole recombination probability. The model has been fitted to our experimental results and yields comparable mobilities for both holes and electrons in the order of 0.1cm2∕Vs. The increasing threshold voltages, with an increase in gate voltage, are discussed as an indication for trapped charge carriers within the insulator (SiO2).

We report on light emission from a polymeric transistor that utilizes interdigitated source and drain electrodes with channel length of 5 μm in a bottom gate configuration based on a Si/SiO2 substrate. The polymer investigated is poly[9,9-di(ethylhexyl)fluorene] deposited by spin coating from chloroform solution to achieve an active layer thickness of 40 nm. Light emission occurs above drain source voltages of −60 V and the light intensity can be controlled by the gate voltage. Emission occurs close to the drain electrode as determined by optical microscopy. The transistor operates in hole accumulation mode without saturation of the output characteristics.

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2+1)-dimensional optical spatial solitons have become a major field of research in nonlinear physics throughout the last decade due to their potential in adaptive optical communication technologies. With the help of photorefractive crystals that supply the required type of nonlinearity for soliton generation, we are able to demonstrate experimentally the formation, the dynamic properties, and especially the interaction of solitary waves, which were so far only known from general soliton theory. Among the complex interaction scenarios of scalar solitons, we reveal a distinct behavior denoted as anomalous interaction, which is unique in soliton-supporting systems. Further on, we realize highly parallel, lightinduced waveguide configurations based on photorefractive screening solitons that give rise to technical applications towards waveguide couplers and dividers as well as all-optical information processing devices where light is controlled by light itself. Finally, we demonstrate the generation, stability and propagation dynamics of multi-component or vector solitons, multipole transverse optical structures bearing a complex geometry. In analogy to the particle-light dualism of scalar solitons, various types of vector solitons can -in a broader sense -be interpreted as molecules of light.