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An analytical model for the transport phenomena of a heterojunction triple metal gate all around tunneling field effect transistor (HTM GAA TFET) is developed for the first time in this paper. The continuous surface potential profile of the staggered-gap aligned heterojunction device is achieved by solving Poisson’s equation, and then, Kane’s model for band to band tunneling is used to derive the drain current of the device. The comparison between the modeling results and Technology Computer Aided Design (TCAD) simulation results with the GaAs0.5Sb0.5/In0.53Ga0.47As heterojunction stems satisfactory consistency. The robust and compatible model approaches the surface potential, electric field, band to band tunneling generation rate, and drain current in an HTM GAA TFET in a methodical manner. The influences of gate oxide thickness, gate oxide dielectric constant, and gate metal work functions on the performance of the considered device are also investigated. To achieve an impactful perspective, the subthreshold swing, Ion/Ioff ratio, and threshold voltage of the device are reviewed as well.

Color centers in diamond are widely explored for applications in quantum sensing, computing, and networking. Their optical, spin, and charge properties have extensively been studied, while their interactions with itinerant carriers are relatively unexplored. Here, we show that NV centers situated 10 ± 5 nm of the diamond surface can be converted to the neutral charge state via hole capture. By measuring the hole capture rate, we extract the capture cross section, which is suppressed by proximity to the diamond surface. The distance dependence is consistent with a carrier diffusion model, indicating that the itinerant carrier lifetime can be long, even at the diamond surface. Measuring dynamics of near-surface NV centers offers a tool for characterizing the diamond surface and investigating charge transport in diamond devices.

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