The arrangement of single gold and palladium atoms deposited on the surface of a 3 monolayer thin film of MgO was investigated using low-temperature scanning tunneling microscopy. While Pd atoms are arranged in a random fashion, Au forms an ordered array on the surface. The long-range ordering as well as the scanning tunneling microscopy appearance of single Au atoms on a 3 monolayer thin MgO film can be explained by partial charge transfer from the substrate to Au atoms as predicted recently by density functional theory calculations [Phys. Rev. Lett. 94, 226104 (2005)10.1103/PhysRevLett.94.226104]. In contrast with that, Au atoms on a thick film were found to be essentially neutral.

Thin SiO 2 films were grown on a Ru(0001) single crystal and studied by photoelectron spectroscopy, infrared spectroscopy and scanning probe microscopy. The experimental results in combination with density functional theory calculations provide compelling evidence for the formation of crystalline, double-layer sheet silica weakly bound to a metal substrate. DOI: 10.1103/PhysRevLett.105.146104 PACS numbers: 68.35.Àp, 68.47.Gh, 68.55.Àa Silicon dioxide (SiO 2 ) plays a key role in many modern technologies and applications that range from insulating layers in integrated circuits to supports for metal and oxide clusters in catalysts. For better understanding of structureproperty relationships on silica-based materials, particularly of reduced dimensions, thin silica films grown on metal single crystal substrates are suggested as suitable model systems that allow the facile application of many ''surface science'' techniques. It has recently been shown that crystalline silica films and nanowires can be grown on Mo(112) [1][2][3][4][5]. The ultrathin film consists of a monolayer honeycomblike network of corner-sharing [SiO 4 ] tetrahedra, thus resulting in a SiO 2:5 stoichiometry of the film. The Si atoms in these films can be partly substituted by Al in the course of preparing metal supported aluminosilicate films [6], which is the first step towards experimental modeling of catalytic centers in zeolitelike materials. However, attempts to grow thicker silica films on the Mo substrates resulted in amorphous structures [7][8][9], most likely due to the formation of strong Si-O-Mo bonds at the interface that govern the growth mode [9]. Recently, the preparation of crystalline silica films on other supports such as Pd(100) [10] and Ni(111) [11] has been reported. However, the atomic structure of the films, film surface termination, and the nature of the silica-metal interface were not determined.In this Letter, we report on the preparation and the atomic structure of well-defined silica films on Ru(0001). The experimental results, obtained by photoelectron and vibrational spectroscopies and high-resolution scanning probe microscopy, are complemented by density functional theory calculations which together provide compelling evidence for the formation of a double-layer sheet silicate, with a SiO 2 stoichiometric composition, weakly bound to a metal support. The results open new perspectives for employing a ''surface science'' approach to understand the reactivity of silicate surfaces consisting of hydrophobic Si-O-Si bonds, such as those of microporous all-silica zeolites [12]. Also, these films can be used as model supports for catalytically active metal and oxide clusters [4,13].The experiments were performed in an ultrahigh vacuum chamber equipped with low energy electron diffraction (LEED) and Auger electron spectroscopy, x-ray photoelectron spectroscopy (XPS), infrared reflection absorption spectroscopy (IRAS), and scanning tunneling microscopy (STM). Atomically resolved atomic force microscopy (AFM) and STM image...

Clear as glass: The atomic structure of a metal-supported vitreous thin silica film was resolved using low-temperature scanning tunneling microscopy (STM). Based on the STM image, a model was constructed and the atomic arrangement of the thin silica glass determined (see picture). The total pair correlation function of the structural model shows good agreement with diffraction experiments performed on vitreous silica.

The atomic structure of thin silica films grown over a Ru(0001) substrate was studied by X-ray photoelectron spectroscopy, infrared reflection absorption spectroscopy, low energy electron diffraction, helium ion scattering spectroscopy, CO temperature programmed desorption, and scanning tunneling microscopy in combination with density functional theory calculations. The films were prepared by Si vapor deposition and subsequent oxidation at high temperatures. The silica film first grows as a monolayer of corner-sharing [SiO(4)] tetrahedra strongly bonded to the Ru(0001) surface through the Si-O-Ru linkages. At increasing amounts of Si, the film forms a bilayer of corner-sharing [SiO(4)] tetrahedra which is weakly bonded to Ru(0001). The bilayer film can be grown in either the crystalline or vitreous state, or both coexisting. Further increasing the film thickness leads to the formation of vitreous silica exhibiting a three-dimensional network of [SiO(4)]. The principal structure of the films can be monitored by infrared spectroscopy, as each structure shows a characteristic vibrational band, i.e., ∼1135 cm(-1) for a monolayer film, ∼1300 cm(-1) for the bilayer structures, and ∼1250 cm(-1) for the bulk-like vitreous silica.

Localized electronic defects on the surface of a 4 monolayer (ML) thin MgO(001) film deposited on Ag(001) have been investigated by low-temperature scanning tunneling microscopy and spectroscopy. Depending on the location of the defect, we observe for the first time different defect energy levels in the band gap of MgO. The charge state of defects can be manipulated by interactions with the scanning tunneling microscope tip. Comparison with ground state energy levels of color centers on the MgO surface obtained from embedded cluster calculations corroborates the assignment of the defects to singly and doubly charged color centers.