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We present evidence of complete, three-dimensional photonic bandgaps in obliquely deposited thin films with a porous microstructure of tetragonally arranged square spirals. We further present a capability to engineer the bandgap center to wavelengths as low as 1.65 mum, with bandgap widths of up to 10.9%. Using new deposition methods that provide detailed control over the photonic crystal dimensions and morphology, this approach allows advanced photonic crystal architectures to be realized over large scales with uncomplicated fabrication technology.

Accurate critical dimension control by using an azide/novolak resist process for electron-beam lithography J. Vac. Sci. Technol. B 15, 2868 (1997 10.1116/1.589746 Application of poly(methyl methacrylate) ultrathin resist supported by a flowing subphase method in electronbeam fabrication of a 4in. high-resolution maskWe report the fabrication of high-resolution sub 50 nm patterns by electron beam lithography using the epoxy novolak SU-8 2000 resist formulation. The minimum linewidth achieved is on the order of 30 nm and corresponds to a threefold reduction in minimum linewidth over previous reports describing similar resist chemistries. Our results also show that it is possible to fabricate dense linear grating elements without proximity correction. The dry etch resistance of native SU-8 2000 was found to be nearly twice that of poly͑methylmethacrylate͒, making it ideal for applications that require pattern transfer. These studies are intended to explore the feasibility of SU-8 2000 as an electron beam resist for pattern generation on length scales below 50 nm.

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