Carrier lifetime and xray imaging correlations of an oxideinduced stacking fault ring and its gettering behavior in Czochralski siliconEffect of a vacuum ion gauge on the contamination of a hydrogenpassivated silicon surface

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Thermal stability of SiHn (n=1∼4) configurations in FZ silicon crystals grown in Ar/H2 has been investigated by means of infrared absorption spectroscopy. Infrared absorption peaks at 2210, 2192, 2123 and 1946 cm−1, which are due to SiH4, SiH3, SiH2 and SiH units in silicon lattice, has been observed. It is found that the concentration of SiH4 and SiH increase with the decrease in SiH2 and SiH3 concentration at 500°C, and vice versa at 600°C. Annealing results suggest thermally induced structural transformations of SiHn configurations. We propose a model of the transformations through the cleavage of adjacent Si-H bonds to form a Si-Si bond and a H2 molecule, as well as the reaction of a H2 molecule with a Si-Si bond.