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Die Aktivität von Sn in festem Fe wird durch Äquilibrierung von ursprünglich reinen Fe‐Plättchen mit flüssigen Ag‐Sn‐Legierungen bestimmt.

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Good-crystallinity gallium sulfide (GaS) films were prepared on silica glass substrates by RF reactive magnetron sputtering with an Ar and H2 gas mixture with various hydrogen fractions (H mf=0.1–0.4). The structure and optical properties of the sputtered GaS films were studied. The X-ray diffraction measurements showed that GaS films deposited at 500°C using Ar as the sputtering gas (H mf=0) had amorphous structures, while those using H mf=0.4 had polycrystalline structures with the c-axis perpendicular to the substrate plane. The absorption edges of the polycrystalline GaS films showed a direct allowed transition with an optical gap of E og=3.0 eV, which was in good agreement with those measured in single-crystal GaS by previous researchers.