Interface of a Bi(001) film onSi(111)−7×7imaged by surface x-ray diffraction

Observation of Peculiar Rashba-Type Spin-Split Band on Bi(111) Surface by High-Resolution Spin- and Angle-Resolved Photoemission Spectroscopy

“…According to the recent surface x-ray diffraction measurement, Bi film grown on Si(111) surface can contain two different domains in which the stacking of the Bi film having three fold symmetry is 180 • rotated to each other [21]. The variation of the out-of-spin component in different Bi film can probably be attributed to the different ratio of the two domains since the photoemission mea- surement gives the averaged information from the sample surface illuminated by the excitation light with finite spot size(∼ ϕ5 mm in the present measurement).…”

Rashba effect of bismuth thin film on silicon studied by spin-resolved ARPES

“…3(b). According to the scanning tunneling microscopy and electron-diffraction experiments [12,13], the coupling between the Bi film and the Si(1 1 1) substrate is fairly weak owing to the aforementioned disordered wetting layer at the interface, suggesting the nearly freestanding nature of the Bi film [17]. The interface between Bi and Si can be regarded as "bottom surface" (Si-side) where the Rashba states similar to those at the normal surface (vacuumside) would emerge due to the breaking of the space-inversion symmetry at the interface.…”

“…It is possible to fabricate the Bi thin film by an epitaxial growth on the Si (1 1 1 called "wetting-layer" between Bi and Si substrate [12,13]. On the wetting layer, Bi thin film grows with a unit of puckered bilayer (BL) as shown in Fig.…”

High‐Resolution Crystal Truncation Rod Scattering: Application to Ultrathin Layers and Buried Interfaces

“…[ 139 ] It is worth mentioning that, among these, the studies by Walker et al [ 128 ] and Tweet et al [ 140 ] were among the first to use anomalous CTR scattering to identify the energy‐dependent scattering from specific surface species as a means to extract atomic positions in an interfacial system. Recently, Shirasawa and colleagues have studied in situ grown heterostructures of Bi, [ 141 ] Bi/Bi 2 Te 3 , and Cu‐doped Bi 2 Te 3 on Si (111) by CTR scattering. [ 84,85,141 ] These structures are variants of topological insulators, which are a class of materials that have generated much interest due to their symmetry‐protected surface states and other unique electronic properties.…”

“…Recently, Shirasawa and colleagues have studied in situ grown heterostructures of Bi, [ 141 ] Bi/Bi 2 Te 3 , and Cu‐doped Bi 2 Te 3 on Si (111) by CTR scattering. [ 84,85,141 ] These structures are variants of topological insulators, which are a class of materials that have generated much interest due to their symmetry‐protected surface states and other unique electronic properties.…”