An antireflection surface with sub-wavelength structure has been successfully fabricated on a fused silica substrate. The fabricated antireflection structured surface consists of a microcone array of fused silica with a period shorter than the wavelengths of visible light. The microcone array is made by a reactive ion etching method using fluorocarbon plasma. A microdisk array of chromium thin film, formed by an electron-beam lithography and lift-off process, is used as the etching mask. Since an electric field induced near the substrate was focused on the edges of the metal disks, these disks gradually shrank. Consequently, a conical shape was formed. The fabricated cone array has a period of 250 nm and a height of 750 nm. Measured reflectivity of the antireflection structured surface is less than 0.5% in the wavelength range of 400–800 nm for normal incidence.

Comparative study of resolution limiting factors in electron beam lithography using the edge roughness evaluation method

Uniform growth of thick GaN was attempted on an AlN templated (111) silicon substrate by hydride vapor phase epitaxy(HVPE). The results were very sensitive to the thickness of the AlN layer as well as the growth temperature. If the AlN is thinner than 50 nm, the surface of the silicon substrate was partly melted during the HVPE growth. If the AlN was thicker than 50 nm, the melting of the silicon surface was drastically suppressed. Uniform growth without degradation of the Si substrate was achieved at 1000 °C with a thick AlN template layer.

A compact spectroscopic imaging device consisting of a planar reflection grating lens, a probe fiber array, and a two-dimensional image sensor was proposed and discussed. Reflected or luminescent lights from a subject are coupled to the probe fibers, guided to fiber output ends, radiated into the air, diffracted by the grating lens with wavelength-dependent angle, and focused onto lines on the image sensor. Two-dimensional intensity distribution on the image sensor can give one-dimensional spectrum distribution along a specified direction. A grating lens was designed with a fiber array and a CCD image sensor for 100-nm wavelength range and 10-mm fiber array width. A spectral resolution of 5 nm and a spatial resolution of 0.25 mm were experimentally confirmed.

We propose a new design method for periodic diffraction gratings to be fabricated with direct-writing electron-beam lithography. When the grating has a small period, the proximity effect of electron scattering restricts the grating profile after developing. Our design method optimizes the electron-dose profile and grating profile simultaneously to obtain the desired diffraction efficiency under the restriction of the proximity effect. The optimization is made with rigorous electromagnetic grating analysis and the resist development simulator. When we designed the diffraction grating with a period of 1.0 microm to obtain the highest efficiency of the first-order diffracted light of a 633-nm wavelength, the calculated grating profile was really different from the profile optimized only with rigorous electromagnetic grating analysis. Moreover, the diffraction grating of the electron-beam resist was fabricated according to the simulation result. The estimated diffraction efficiency was 82%, and the measured efficiency was 70%.