New high repetition rate picosecond lasers offer possibility for high efficiency structuring of transparent conductors on glass and other substrates. The results of ablation of the indium-tin oxide (ITO) layer on glass with picosecond lasers at various wavelengths are presented. Laser radiation initiated ablation that formed trenches in ITO. Profile of the trenches was analyzed with a phase contrast optical microscope, a stylus type profiler, SEM and AFM. Clean removal of the ITO layer with the 266 nm radiation was observed when laser fluence was above the threshold of 0.20 J/cm 2 , while for the 355 nm radiation the threshold was higher, above 0.46 J/cm 2 . The glass substrate was damaged in the area where the fluence was higher than 1.55 J/cm 2 . The 532 nm radiation allowed getting well defined trenches, but a lot of residues in the form of dust were generated on the surface. Use of UV laser radiation with fluences close to the ablation threshold made it possible to minimize the recast ridge formation and surface contamination during the process. The latter was confirmed by the scanning Auger spectroscopy. The processing speed of up to 0.5 m/s was achieved when using high repetition rate picosecond lasers in the UV range.

Rapid Laser Patterning (RLP) of ITO on glass offers a cost effective alternative to wet-etch lithography in the manufacture of PDPs. It is demonstrated that RLP can effectively pattern ITO to industrial standards. It is also shown that the process is rapid and has major cost benefits vs. lithography. RLPWet etch Resist Coating Resist Exposure (UV) Resist Wet Etching ITO Wet Etch Resist Stripping Cleaning Laser Direct Write of ITO Rinsing SID 07 DIGEST • 1211

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