MoS 2 thin films have been deposited onto 52100 steel substrates by aerosol-assisted chemical vapor deposition using the metal-organic precursor tetrakis(diethyl-dithiocarbamato)molybdenum(IV) (1). Analysis of the films indicates growth of an initial, highly crystalline FeS layer exhibiting preferred orientation parallel to the substrate, followed by growth of MoS 2 nanoparticles. Friction coefficients for MoS 2 -coated steel specimens reach 0.10 when tested at 100 °C in air. Tetrakis(tert-butylthiolato)titanium(IV) (2), dissolved with complex 1 in THF solutions, yields nanoparticle films of variable TiO 2 content as a result of solvent decomposition on MoS 2 and subsequent in situ reaction with the titanium precursor.

A series of light- and air-stable tris(phosphino)borato silver(I) complexes has been synthesized, structurally and spectroscopically characterized, and implemented in the growth of low resistivity metallic silver thin films by aerosol-assisted chemical vapor deposition (AACVD). Of the four complexes in the series, [RB(CH2PR'2) 3]AgPEt3 (R = Ph (1, 3), (n)Bu (2, 4); R' = Ph (1, 2), (i)Pr (3, 4), complexes 1 and 2 have been characterized by single-crystal X-ray diffraction. Complex 2 represents a significant improvement over previously available nonfluorinated Ag precursors, owing to ease of handling and efficient film deposition characteristics. Thermogravimetric analysis (TGA) shows that the thermolytic properties of these complexes can be significantly modified by altering the ligand structure. Polycrystalline cubic-phase Ag thin films were grown on glass, MgO(100), and 52100 steel substrates. Ag films of thicknesses 3 microm, grown at rates of 14-18 nm/min, exhibit low levels of extraneous element contamination by X-ray photoelectron spectroscopy (XPS). Atomic force microscopy (AFM) and scanning electron microscopy (SEM) indicate that film growth proceeds primarily via an island growth (Volmer-Weber) mechanism.

The air‐stable, highly volatile precursor bis[di(2,2,2‐trifluoroethyl) dithiocarbamato]copper(II) (see Figure) has been fully characterized by single‐crystal XRD and thermogravimetric analysis, and shown to be a highly effective single‐source precursor for the deposition of high‐quality p‐type cuprous sulfide films by MOCVD. As‐deposited films are phase‐pure and polycrystalline, as indicated by XRD and X‐ray photoelectron spectroscopy.