An enzyme electrode for the detection of V-type nerve agents, VX (O-ethyl-S-2-diisopropylaminoethyl methylphosphonothioate) and R-VX (O-isobutyl-S-2-diethylaminoethyl methylphosphonothioate), is proposed. The principle of the new biosensor is based on the enzyme-catalyzed hydrolysis of the nerve agents and amperometric detection of the thiol-containing hydrolysis products at carbon nanotube-modified screen-printed electrodes. Demeton-S was used as a nerve agent mimic. 2-(Diethylamino)ethanethiol (DEAET) and 2-(dimethylamino)ethanethiol (DMAET), the thiol-containing hydrolysis product and hydrolysis product mimic of R-VX and VX, respectively, were monitored by exploiting the electrocatalytic activity of carbon nanotubes (CNT). As low as 2 microM DMAET and 0.8 microM DEAET were detected selectively at a low applied potential of 0.5 V vs Ag/AgCl at a CNT-modified mediator-free amperometric electrode. Further, the large surface area and the hydrophobicity of CNT was used to immobilize organophosphorus hydrolase mutant with improved catalytic activity for the hydrolysis of the P-S bond of phosphothiolester neurotoxins including VX and R-VX nerve gases to develop a novel, mediator-free, membrane-free biosensor for V-type nerve agents. The applicability of the biosensor was demonstrated for direct, rapid, and selective detection of V-type nerve agents' mimic demeton-S. The selectivity of the sensor against interferences and application to spiked lake water samples was demonstrated.

CdTe nanowires with controlled composition were cathodically electrodeposited using track-etched polycarbonate membrane as scaffolds and their material and electrical properties were systematically investigated. As-deposited CdTe nanowires show nanocrystalline cubic phase structures with grain sizes of up to 60 nm. The dark-field images of nanowires reveal that the crystallinity of nanowires was greatly improved from nanocrystalline to a few single crystals within nanowires upon annealing at 200 °C for 6 h in a reducing environment (5% H(2)+95% N(2)). For electrical characterization, a single CdTe nanowire was assembled across microfabricated gold electrodes using the drop-casting method. In addition to an increase in grain size, the electrical resistivity of an annealed single nanowire (a few 10(5) Ω cm) was one order of magnitude greater than in an as-deposited nanowire, indicating that crystallinity of nanowires improved and defects within nanowires were reduced during annealing. By controlling the dopants levels (e.g. Te content of nanowires), the resistivity of nanowires was varied from 10(4) to 10(0) Ω cm. Current-voltage (I-V) characteristics of nanowires indicated the presence of Schottky barriers at both ends of the Au/CdTe interface. Temperature-dependent I-V measurements show that the electron transport mode was determined by a thermally activated component at T>-50 °C and a temperature-independent component below -50 °C. Under optical illumination, the single CdTe nanowire exhibited enhanced conductance.

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Cadmium telluride nanoribbons were synthesized electrochemically and formed into nanodevices using lithographically patterned nanowire electrodeposition (LPNE) that integrated synthesis and device fabrication together. By controlling the composition of the CdTe nanoribbons via adjusting the electrodeposition potential, electrical properties (i.e., electrical resistivity and field-effect transistor (FET) mobility) and optoelectronic property (photocurrent) were tuned and compared. Electrical resistivity of CdTe nanoribbons was strongly dependent on the Te content as higher Te content provided higher carrier concentration. Electrical conduction was limited by grain boundary traps due to polycrystalline structure. FET mobility was correlated to electrical resistivity and photocurrent, and annealed samples showed improved FET mobility, electrical resistivity, and photocurrent response.