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In this work, the effect of biaxial strain on the electronic band structure of monolayers of MoS 2 is investigated. The effective mass of carriers under different strain values is extracted and the achieved results are discussed. For the first time, we have assessed the effect of biaxial strain on the ultimate performance of MoS 2 -based double gate field effect transistors (DGFETs). The results indicate that by strain engineering, a significant performance improvement of MoS 2 -based DGFETs can be achieved. V C 2013 AIP Publishing LLC [http://dx.

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