Recently, owing to the great structural tunability, excellent photothermal property, and strong photobleaching resistance, organic-small-molecule photothermal materials are proposed as promising solar absorbent materials. Herein, through fusing two strong electron-withdrawing units dibenzo[f,h]quinoxaline and anthraquinone units, a rigid planar acceptor dibenzo[a,c]naphtho[2,3-h] phenazine-8,13-dione (PDN) with stronger electron-withdrawing ability is obtained and used to construct donor-acceptor-type organic-small-molecule solar-energyabsorbing material, 2,17-bis(diphenylamino)dibenzo[a,c]naphtho[2,3-h]phenazine-8,13-dione (DDPA-PDN). The new compound exhibits a strong intramolecular charge transfer character and conjugates rigid plane skeleton, endowing it with a broadband optical absorption from 300 to 850 nm in the solid state, favorable photothermal properties, high photothermal conversion ability, and good photobleaching resistance. Under laser irradiation at 655 nm, the solid photothermal conversion efficiency of the resulting DDPA-PDN molecule reaches 56.23%. Additionally, DDPA-PDN-loaded cellulose papers equipped with abundant microchannels for water flow are integrated with thermoelectric devices, thus achieving an evaporation rate and voltage as high as 1.07 kg m −2 h −1 and 83 mV under 1 kW m −2 solar irradiation, respectively. This study demonstrates the application of photothermal organic-small-molecules in water evaporation and power generation, therefore offering a valuable prospect of their utilization in solar energy harvesting.

Surface oxidation states of transition (Fe and Co) and noble (Pd and Pt) metals were tailored by controlled exposure to O2 plasmas, thereby enabling their removal by specific organic chemistries. Of all organic chemistries studied, formic acid was found to be the most effective in selectively removing the metal oxide layer in both the solution and vapor phase. The etch rates of Fe, Co, Pd, and Pt films, through an alternating plasma oxidation and formic acid vapor reaction process, were determined to be 4.2, 2.8, 1.2, and 0.5 nm/cycle, respectively. Oxidation by atomic oxygen was an isotropic process, leading to an isotropic etch profile by organic vapor. Oxidation by low energy and directional oxygen ions was an anisotropic process and thus results in an anisotropic etch profile by organic vapor. This is successfully demonstrated in the patterning of Co with a high selectivity over the TiN hardmask, while preserving the desired static magnetic characteristic of Co.

Integrated water purification and electricity generation by photo-thermal effect has attracted great attention. However, the central issues are designs of the photothermal materials with efficient utilization of solar energy for...

Solar-driven interfacial vaporization by localizing solar-thermal energy conversion to the airÀ water interface has attracted tremendous attention. In the process of converting solar energy into heat energy, photothermal materials play an essential role. Herein, a flexible solar-thermal material di-cyan substituted 5,12-dibutylquinacridone (DCNÀ 4CQA)@Paper was developed by coating photothermal quinacridone derivatives on the cellulose paper. The DCNÀ 4CQA@Paper combines desired chemical and physical properties, broadband light-absorbing, and shape-conforming abilities that render efficient photothermic vaporization. Notably, synergetic coupling of solar-steam and solar-electricity technologies by integrating DCNÀ 4CQA@Paper and the thermoelectric devices is realized without trade-offs, highlighting the practical consideration toward more impactful solar heat exploitation. Such solar distillation and low-grade heat-to-electricity generation functions can provide potential opportunities for fresh water and electricity supply in off-grid or remote areas.

Recessed Si 0.8 Ge 0.2 source/drain (S/D) and a compressive contact etch-stop layer have been successfully integrated resulting in nearly 200% improvement in hole mobility. This is the largest reported process-induced hole mobility enhancement to the authors' knowledge. This letter demonstrates that a drivecurrent improvement from recessed Si 0.8 Ge 0.2 plus the compressive nitride layer are in fact additive. Furthermore, it shows that the mobility enhancement is a superlinear function of stress, leading to larger than additive gains in the drive current when combining several stress sources.Index Terms-MOSFET, SiGe, strained-silicon, technology computer-aided design (TCAD).