The fabrication of SrZrO3 (SZO) memory devices with oxygen-rich (OR) and oxygen-deficient (OD) double layers, their resistive switching (RS) characteristics and mechanisms are investigated in this study. Due to the difference in oxygen content between the OR and OD layers formed by an oxygen flow control (OFC) process during SZO deposition, the RS region is effectively reduced and localized within the OR layer, which leads to a low operation voltage and stable RS behaviours. Furthermore, the OFC SZO device exhibits high-speed switching (10 ns) over 400 times and long retention (>106 s), showing promising potential for next-generation nonvolatile memory applications.

Reproducible resistance switching characteristics of hafnium oxide-based nonvolatile memory devices

Nonpolar bistable resistive switching behaviors of sol-gel derived bismuth titanate oxide (BTO) thin film are investigated in this study. The BTO thin film memory device without thermal treatment shows higher resistance ratio (∼10 4 ) than the other annealed devices. The resistive switching behavior of the Pt/BTO/LNO/Pt device is reproducible and can be traced over 100 times. Both low resistance state (ON-state) and high resistance state (OFF-state) are stable over 10 4 s under 0.3 V voltage stress at room temperature (RT) and 85 • C. The retention behaviors of both memory states in the Pt/BTO/LNO/Pt device are very stable over 2 × 10 6 s at RT and 85 • C, showing that the BTO thin film memory device is a good candidate for nonvolatile memory application

In this study, we investigated the resistive switching characteristics of the SrZrO 3 (SZO)-based resistance random access memory (RRAM). After the sequential thin-films Pt/Ti/SZO/LaNiO 3 deposition, the post annealing (PA) treatment under various conditions was carried out to form the interfacial layer (TiO x ) between Ti and SZO. It can be proved that the Ti modulation layer act as an oxygen getter can modify the resistive switching property of RRAM. With the suitable thickness of Ti layer and the proper annealing temperature, the SZO-based RRAM device could have a lower operation voltage, a lower compliance current a long retention behavior, and stable resistance ratio over 10 4 s under 0.3 V reading voltage.

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