Raman spectroscopic investigations are carried out on one-dimensional nanostructures of InN, such as nanowires and nanobelts synthesized by chemical vapor deposition. In addition to the optical phonons allowed by symmetry; A 1, E 1 and E 2 (high) modes, two additional Raman peaks are observed around 528 cm -1 and 560 cm -1 for these nanostructures. Calculations for the frequencies of surface optical (SO) phonon modes in InN nanostructures yield values close to those of the new Raman modes. A possible reason for large intensities for SO modes in these nanostructures is also discussed.

Single‐crystalline InN nanobelts have been synthesized using Au as the catalyst by a guided‐stream thermal chemical vapor deposition technique. The resultant InN nanobelts typically have widths ranging from 20 to 200 nm, a width to thickness ratio of 2–10, and lengths of up to several tens of micrometers. Structural analysis shows that these InN nanobelts have a wurtzite structure and exhibit a rectangular cross section with self‐selective facets, i.e., the nanobelts are enclosed only by ± (001) and ± (11?0) planes with [110] being the exclusive growth direction along their long axis. This facet selectivity can be understood by the differences in the surface energies of the different facets. Photoluminescence (PL) spectra of InN nanobelts show a sharp infrared emission peak at 0.76 eV with a full width at half maximum of 14 meV, narrower than the values reported for InN epilayers. The integrated PL intensity is found to increase linearly with the excitation power, which suggests that the observed PL can be attributed to direct band‐to‐band emission.

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Infrared lasing from single-crystalline InN nanobelts grown by metal organic chemical vapor deposition was demonstrated. Transmission electron microscopy studies revealed that the InN nanobelts of rectangular cross section grew along ͓110͔ direction and were enclosed by ±͑001͒ and ±͑110͒ planes. The infrared lasing action was observed at 20 K in the InN nanobelts grown on an amorphous silicon nitride coated silicon substrate by continuous wave laser pumping.