Infrared lasing in InN nanobelts

Abstract

Infrared lasing from single-crystalline InN nanobelts grown by metal organic chemical vapor deposition was demonstrated. Transmission electron microscopy studies revealed that the InN nanobelts of rectangular cross section grew along ͓110͔ direction and were enclosed by ±͑001͒ and ±͑110͒ planes. The infrared lasing action was observed at 20 K in the InN nanobelts grown on an amorphous silicon nitride coated silicon substrate by continuous wave laser pumping.

Quantum transport in indium nitride nanowires

“…The nanowire grows along [100] direction and the interplanar spacing of the (100) planes is estimated to be 0.307 nm, which matches that of InN single crystal with a lattice constant a= 0.354 nm. 14 The Fast Fourier Transform (FFT) result (inset in Fig.1d) shows typical diffraction pattern of the hexagonal system at the [001] projection direction.…”

Microstructural properties and initial growth behavior of InN nanobats grown on a Si(1 1 1) substrate

“…These difficulties with regard to the growth of high quality epitaxial InN layers can be overcome by growing nanometer-sized materials. Recently, InN nanowires were successfully grown by chemical vapor deposition (CVD) and molecular beam epitaxy (MBE) [1][2][3][4][5][6][7][8][9][10][11]. Although the CVD methods have several advantages, such as a large-scale production and an easy approach, these methods have a few problems associated with the growth of heterostructurednanowires and/or well-aligned nanowires.…”

Особенности спектров фотовозбуждения эпитаксиальных слоев InN, выращенных методом молекулярно-пучковой эпитаксии с плазменной активацией азота

“…При всем несо-вершенстве эпитаксиальных методов выращивания InN во многих лабораториях ведутся работы по приборным применениям InN-структур в качестве светодиодов [3] и детекторов ИК-диапазона [4,5], быстродействующих полевых транзисторов [6]. В эпитаксиальных слоях n-InN наблюдалась эффективная фотолюминесценция [7] и стимулированное излучение при оптической накачке [8]. Однако необходимо отметить, что фотоэлектрические свойства InN остаются исследованными недостаточно.…”