As the demand for taking Source Mask Optimization (SMO) technology to the full-chip level is increasing, the development of a flow that overcomes the limitations which hinder this technology's moving forward to the production level is a priority for Litho-Engineers.The aim of this work is to discuss advantages of using a comprehensive novel SMO flow that outperforms conventional techniques in areas of high capacity simulations, resist modeling and the production of a final manufacturable mask. We show results that indicate the importance of adding large number of patterns to the SMO exploration space, as well as taking into account resist effects during the optimization process and how this flow incorporates the final mask as a production solution.The high capacity of this flow increases the number of patterns and their area by a factor of 10 compared to other SMO techniques. The average process variability band is improved up to 30% compared to the traditional lithography flows.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.