The electrostatic doping technique has the ability to reduce random dopant fluctuations (RDFs), fabrication complexity and high thermal budget requirement in the fabrication process of nano-scale devices. In this paper, first time propose and simulate a Junction Free Electrostatically Doped Tunnel Field-Effect Transistor (JF-ED-TFET) based biosensor for label-free biosensing applications. The gate dielectric modulation concept used for sensing the existence of biomolecules inside the nano-cavity, created in gate dielectric material towards the tunneling junction to modulate the tunneling mechanism. The sensitivity of JF-ED-TFET biosensor investigate with various types of biomolecules based on dielectric constants (k ) and charge densities (ρ). The sensing response of the JF-ED-TFET biosensor analyze in terms of electric field, energy band and transfer characteristic and the sensitivity in terms of I ON , I ON /I OF F ratio and Subtheshold Swing. The sensitivity of device investigated based on practical challenges as different filling factor and step-profile generated from the steric hinderance. The effect of temperate and nano-cavity dimensions variation on device performance also has been analyzed. In this work, various types of biomolecules as Streptavidin (k = 2.1), Ferro-cytochrome c (k = 4.7), keratin (k = 8) and Gelatin (k = 12) has been considered for the performance investigation.

In this paper, the performance of dual-material stacked gate oxide-source dielectric pocket-tunnel field-effect transistor (DMSGO-SDP-TFET) has been investigated by considering fixed interface trap charges (ITCs) at the Si–SiO2 interface. During the analysis, both types of trap charges, positive (donor) and negative (acceptor), have been considered to investigate their effect on the DC, analog/radio frequency, linearity and harmonic distortion performance parameters in terms of the carrier concentration, electric field, band-to-band tunneling rate, transfer characteristics, transconductance ([Formula: see text]), unity gain frequency ([Formula: see text]), gain–bandwidth product, device efficiency ([Formula: see text]/[Formula: see text]), transconductance frequency product, transit time ([Formula: see text]), second- and third-order transconductance and voltage intercept points ([Formula: see text], [Formula: see text], VIP2 and VIP3), third-order Input Intercept Point and Intermodulation Distortion (IIP3, IMD3), second-, third-order and total harmonic distortions (HD2, HD3 and THD), respectively. Further, the impact of temperature variations from [Formula: see text][Formula: see text]K to [Formula: see text][Formula: see text]K in the presence of ITCs is investigated and the results are compared with conventional DMSGO-TFET. In terms of percentage variation, DMSGO-SDP-TFET depicts lower variation than conventional DMSGO-TFET, indicating that the proposed device is more immune to trap charges and can be used for energy-efficient, high-frequency and linearity applications at elevated temperatures.

The tunnel field-effect transistor (TFET) has emerged as a promising device for biosensing applications due to band-to-band tunneling (BTBT) operation mechanism and a steep subthreshold swing. In this paper, an electrically doped cavity on source junctionless tunnel field-effect transistor (ED-CS-JLTFET)-based biosensor is proposed for label-free detection of biomolecules. In the proposed model, the electrically doped concept is enabled to reduce fabrication complexity and cost. In order to create a nano-cavity at the source region, some portion of the dielectric oxide of the polarity gate terminal is etched away. To perceive the presence of biomolecules, two important properties of biomolecules, such as dielectric constant and charge density, are incorporated throughout the simulation. The sensing performance of the proposed ED-CS-JLTFET-based biosensor has been analyzed in terms of transfer characteristics, threshold voltage and subthreshold swing. In addition, the sensitivity of the proposed biosensor has also been analyzed with respect to different fill factors (FFs), varying nano-cavity dimension and work-function of the control gate. It is found from the simulated results that the proposed ED-CS-JLTFET-based biosensor offers higher current sensitivities with neutral, positively charged and negatively charged biomolecules of [Formula: see text] (at k [Formula: see text]), [Formula: see text] (at [Formula: see text] and [Formula: see text] C[Formula: see text]cm[Formula: see text]) and [Formula: see text] (at k [Formula: see text] and [Formula: see text] C[Formula: see text]cm[Formula: see text]), respectively.

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The electrostatic doping technique has the ability to reduce random dopant fluctuations (RDFs), fabrication complexity and high thermal budget requirement in the fabrication process of nano-scale devices. In this paper, first time propose and simulate a Junction Free Electrostatically Doped Tunnel Field-Effect Transistor (JFED- TFET) based biosensor for label-free biosensing applications. The gate dielectric modulation concept used for sensing the existence of biomolecules inside the nano-cavity, created in gate dielectric material towards the tunneling junction to modulate the tunneling mechanism. The sensitivity of JF-ED-TFET biosensor investigate with various types of biomolecules based on dielectric constants (k) and charge densities (ρ). The sensing response of the JF-ED-TFET biosensor analyze in terms of electric field, energy band and transfer characteristic and the sensitivity in terms of ION, ION/IOFF ratio and Subtheshold Swing. The sensitivity of device investigated based on practical challenges as different filling factor and step-profile generated from the steric hinderance. The effect of temperate and nano-cavity dimensions variation on device performance also has been analyzed. In this work, various types of biomolecules as Streptavidin (k = 2.1), Ferro-cytochrome c (k = 4.7), keratin (k = 8) and Gelatin (k = 12) has been considered for the performance investigation.