High performance titanium nitride sub-100 nm rectifying contact, deposited by sputtering on AlGaN/GaN high electron mobility transistors, shows a reverse leakage current as low as 38 pA/mm at VGS = -40 V and a Schottky barrier height of 0.95 eV. Based on structural characterization and 3D simulations, it is found that the polarization gradient induced by the gate metallization forms a P-type pseudo-doping region under the gate between the tensile surface and the compressively strained bulk AlGaN barrier layer. The strain induced by the gate metallization can compensate for the piezoelectric component. As a result, the gate contact can operate at temperatures as high as 700 °C and can withstand a large reverse bias of up to -100 V, which is interesting for high-performance transistors dedicated to power applications

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A microwave measurement technique, using a novel cell which enables the sheet resistance (R⧠), the carrier density (n), and the mobility (μ) of epitaxial layers to be measured, is proposed. The system, controlled by a microcomputer, performs this characterization by measuring galvanomagnetic effects. The sample is only lightly pressed on the cell. The electrical contacts between the sample and the cell are capacitive. This method is thus nondestructive and requires no technological process. The data treatment necessitates knowledge of factors which are determined from a calibration procedure made only once. For the GaAs samples reported here, the accuracy is better than 5% for R⧠, 15% for μ, and 20% for n.