The advantages of backthinning monolithic active pixel sensors (MAPS) based on complementary metal oxide semiconductor (CMOS) direct electron detectors for electron microscopy have been discussed previously; they include better spatial resolution (modulation transfer function or MTF) and efficiency at all spatial frequencies (detective quantum efficiency or DQE). It was suggested that a ‘thin’ CMOS detector would have the most outstanding properties [1–3] because of a reduction in the proportion of backscattered electrons. In this paper we show, theoretically (using Monte Carlo simulations of electron trajectories) and experimentally that this is indeed the case.The modulation transfer functions of prototype backthinned CMOS direct electron detectors have been measured at 300 keV. At zero spatial frequency, in non-backthinned 700-μm-thick detectors, the backscattered component makes up over 40% of the total signal but, by backthinning to 100, 50 or 35 μm, this can be reduced to 25%, 15% and 10%, respectively. For the 35 μm backthinned detector, this reduction in backscatter increases the MTF by 40% for spatial frequencies between 0.1 and 1.0 Nyquist. As discussed in the main text, reducing backscattering in backthinned detectors should also improve DQE.

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A new current mode building block named voltage and current gain second generation current conveyor (VCG-CCII) is introduced. The voltage and current buffers of the standard CCII are replaced by voltage and current amplifiers with tunable gains so to obtain an extremely flexible and versatile building block. The VCG-CCII can be used in place of the standard CCII in impedance conversion applications so to utilize only one active component. A circuit implementation in a standard 0.35 lm CMOS process is presented and used to multiply, as an example, a 10 pF capacitor by a factor tunable from 1 up to about 3100, achieving a capacitance multiplication for more than 6 decades frequency range (from 0.15 to 865 KHz for the highest multiplication factor).

With the increased brilliance of state-of-the-art Synchrotron radiation sources and the advent of Free Electron Lasers enabling revolutionary science with EUV to X-ray photons comes an urgent need for suitable photon imaging detectors. Requirements include high frame rates, very large dynamic range, single-photon counting capability with low probability of false positives, and (multi)-megapixels. PERCIVAL ("Pixelated Energy Resolving CMOS Imager, Versatile and Large") is currently being developed by a collaboration of DESY, RAL, Elettra and DLS to address this need for the soft X-ray regime. PERCIVAL is a monolithic active pixel sensor (MAPS), i.e. based on CMOS technology. It will be back-thinned to access its primary energy range of 250 eV to 1 keV with target efficiencies above 90%. According to its preliminary specifications, the roughly 10 × 10 cm 2 , 3520 × 3710 pixel monolithic sensor will operate at frame rates up to 120 Hz (commensurate with most FELs) and use multiple gains within its 27 µm pixels to measure (e.g. at 500 eV) 1 to ∼10 5 simultaneously-arriving photons. Currently, small-scale front-illuminated prototype systems (160 × 210 pixels) are undergoing detailed testing with visible-light as well as X-ray photons.

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