This article presents investigation on secondary ion mass spectroscopy (SIMS) profile quantification for ultrashallow profiles. New configuration for the cesium and oxygen sources on the CAMECA IMS Wf tool-provides SIMS profiling capability at 150 eV impact energy with sputter rates of 1 and 2 nm/min for the Cs+ and O2+ primary beams, respectively. Results for as-implanted B, P, and As profiles using extremely low impact energy (EXLIE) sputtering conditions are reported. They are compared with high resolution Rutherford backscattering spectroscopy and elastic recoil detection analysis profiles. The overall results confirm that the use of EXLIE conditions minimizes near surface (depth <5 nm) artifacts but data quantification still requires dedicated postanalysis data treatment to take into account matrix effects between Si and SiO2.

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Plasma doping two-dimensional characterization using low energy x-ray emission spectroscopy and full wafer secondary ion mass spectrometry/angle-resolved x-ray electron spectroscopy techniques J. Vac. Sci. Technol. B 28, C1D1 (2010); 10.1116/1.3273873 Dopant Dose Metrology for UltraShallow Implanted Wafers using ElectronInduced XRay Spectrometry at Pattern Size Scale AIP Conf. Proc. 788, 236 (2005); 10.1063/1.2062968X-ray and secondary ion mass spectrometry investigation of activation behavior of self-preamorphized silicon substrate J.Quantitative determination of dopant dose in shallow implants using the low energy x-ray emission spectroscopy technique J.Secondary ion mass spectrometry ͑SIMS͒ and low energy electron induced x-ray emission spectroscopy ͑LEXES͒ are both well established technologies. SIMS tools are the ultimate reference for depth profiling and direct measurement of dopants with highest sensitivity and dynamic range. The LEXES-based shallow probe is a versatile, sensitive, in-line metrology tool for thin layer elemental composition and dopant dosimetry in semiconductor production. In this contribution, the ability of LEXES and SIMS techniques to differentiate nominal dose differences among three different 300 mm patterned wafers are compared. In each die, several test pads were available for dose measurements. Five neighboring dies were measured by LEXES and afterward by SIMS. The repeatability measurements of both techniques ͑ Ͻ 0.5% ͒ is suitable to determine dose nonuniformity from die to die and to discriminate nominal dose between wafers as small as 3%. FIG. 3. Example for SIMS measurement: As implant dose repeatability of 40 SIMS craters, 150 s each, RSD 0.2%. FIG. 4. Shallow probe schematic. C1C56 Ehrke et al.: Shallow As dose measurements of patterned wafers with SIMS and LEXES C1C56 J.

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