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Varactor Tuned Gunn o s c i l l a t o r s and c h i p -l e v e l IMPATT diode power combiners have been f a b r i c a t e d a t frequenTechniques f o r t h e design and f a b r i c a t i o n o f such c i r c u i t s The b e s t lumped-element VCO tuned from 6 t o 11.3 GHz w i t h A six-mesa s e r i e s -p a r a l l e l a r r a y o f GaAs IMPATT diode chips generated 22.5

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Thin (11.4 nm) gate quality silicon dioxide films were subjected to high-temperature (850–1150 °C) rapid thermal nitridation cycles in ultrapure ammonia. Secondary-ion mass spectroscopy and neutron depth profiling results indicate a significant level of nitrogen diffusion into the silicon substrate. After stripping the dielectric layers, Schottky diode studies were performed using an electrolyte-based technique. We found, for the first time, the formation of nitridation-induced ultrathin (less than 60 nm) n-type layers at the top surface of nominally p-type silicon substrates used in the study. A nitrogen-oxygen donor complex formation mechanism is invoked to explain the presence of the ultrathin n-type layers.

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