We report device mobility >500 cm2/V•s in a scalable process suitable for electronic backplanes for large area OLED displays. Ceramic substrates as large as 4x4 inches were fabricated utilizing planarized regions of Single Crystal Silicon (SCS).

We report device mobility >300 cm 2 /V•s in a scalable process suitable for electronic backplanes for large area OLED displays. Single crystal Si spheres ~800 μm are planarized to form device substrates. Performance of transistors on spheres andCzochralski (CZ) silicon wafers are compared.

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Varactor Tuned Gunn o s c i l l a t o r s and c h i p -l e v e l IMPATT diode power combiners have been f a b r i c a t e d a t frequenTechniques f o r t h e design and f a b r i c a t i o n o f such c i r c u i t s The b e s t lumped-element VCO tuned from 6 t o 11.3 GHz w i t h A six-mesa s e r i e s -p a r a l l e l a r r a y o f GaAs IMPATT diode chips generated 22.5

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