With the unceasing advancement of wide-bandgap (WBG) semiconductor technology, the minimal reverse-recovery charge Qrr and other more powerful natures of WBG transistors enable totem-pole bridgeless power factor correction to become a dominant solution for energy storage systems (ESS). This paper focuses on the design and implementation of a control structure for a totem-pole boost PFC with newfangled enhancement-mode gallium nitride field-effect transistors (eGaN FETs), not only to simplify the control implementation but also to achieve high power quality and efficiency. The converter is designed to convert a 90–264-VAC input to a 385-VDC output for a 2.6-kW output power. Lastly, to validate the methodology, an experimental prototype is characterized and fabricated. The uttermost efficiency at 230 VAC reaches 99.14%. The lowest total harmonic distortion in the current (ITHD) at high line condition (230 V) attains 1.52% while the power factor gains 0.9985.

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With the unceasing advancement in wide-bandgap (WBG) semiconductor technology, the minimal reverse-recovery charge Qrr and other more powerful natures of WBG transistors enable totem-pole bridgeless PFC to become a dominant solution for energy storage systems (ESS). This paper focuses on design and implementation of a control structure for a totem-pole boost PFC with newfangled enhancement-mode Gallium Nitride (eGaN) FETs, not only to simplify the control implementation, but also to achieve high power quality and efficiency. The converter is designed to convert a 90-264-VAC input to a 385-VDC output for a 2.6-kW output power. Lastly, to validate the methodology, an experimental prototype is characterized and fabricated. The uttermost efficiency at 230 VAC attains 99.14%. The lowest total harmonic distortion in the current (ITHD) at high line condition (230 V) reaches 1.52% while the power factor gains 0.9985.

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