2020
DOI: 10.3390/en13236297
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Design and Implementation of a Control Method for GaN-Based Totem-Pole Boost-Type PFC Rectifier in Energy Storage Systems

Abstract: With the unceasing advancement of wide-bandgap (WBG) semiconductor technology, the minimal reverse-recovery charge Qrr and other more powerful natures of WBG transistors enable totem-pole bridgeless power factor correction to become a dominant solution for energy storage systems (ESS). This paper focuses on the design and implementation of a control structure for a totem-pole boost PFC with newfangled enhancement-mode gallium nitride field-effect transistors (eGaN FETs), not only to simplify the control implem… Show more

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Cited by 9 publications
(4 citation statements)
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“…The design of the memory elements of the CBR is the same as that of a conventional boost converter. In addition to the CBR, dual boost bridge-less PFC rectifiers [54][55][56][57][58][59], totem-pole bridge-less PFC rectifiers [60][61][62][63], and interleaved boost PFC rectifiers [64] are more commonly used [65] in several products that need PFC. On the three-phase system side, Vienna rectifiers have become very popular [66] since they have inherent PFC capability.…”
Section: Power Factor Correctionmentioning
confidence: 99%
“…The design of the memory elements of the CBR is the same as that of a conventional boost converter. In addition to the CBR, dual boost bridge-less PFC rectifiers [54][55][56][57][58][59], totem-pole bridge-less PFC rectifiers [60][61][62][63], and interleaved boost PFC rectifiers [64] are more commonly used [65] in several products that need PFC. On the three-phase system side, Vienna rectifiers have become very popular [66] since they have inherent PFC capability.…”
Section: Power Factor Correctionmentioning
confidence: 99%
“…P loss_total = P loss_sw + P loss_cap + P loss_cond (6) If parameters listed in Table 5 are used together with Equations (1)-( 6), then the estimation of the power losses of one transistor in the topology considered in Figure 1 is shown in Table 6. Here, it is seen that the selected GaN transistor is exhibiting lower switching losses.…”
Section: Example Of the Calculation Of Losses Of Power Transistor In ...mentioning
confidence: 99%
“…Today, every manufacturer is trying to reduce the volume of the inverter that is connected to the mains in order to optimize the dimensions and weight. One of the ways to reduce the converter itself is to optimize it for higher switching frequencies, through which it is possible to use passive elements with smaller values and thus smaller dimensions [4][5][6][7].…”
Section: Introductionmentioning
confidence: 99%
“…Considering the technological development of wide-bandgap components, it can be noted that SiC technology has held a relatively stable place in terms of the choice of semiconductor components in high-performance electronic systems. Manufacturers have a wide portfolio of these elements, while the differences in electrical properties are mainly due to technological know-how [19][20][21].…”
Section: Introductionmentioning
confidence: 99%