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The developed bonding process utilizes AuSn solder and provides liquid-proof sealing and multiple reliable electrical connections between the bonded wafers. The bond can withstand 300ºC and features a thin bond line (2-3 µm), high bond strength, excellent bond gap control, and low stress due to small amount of bonding material. A Nb/Au seed layer was shown to be an optimal adhesion and barrier film.

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The paper summarizes our experience with deep RIE etching of silicon for MEMS applications, including optical MEMS and sensors, with emphasis on deep RIE of SO1 wafers. Most of the reported results have been achieved using the STS ICP RIE etcher with a mechanical chuck. The major issues discussed are: special tooling for deep RIE for MEMS applications, wafer/structures overheating, masking materials, etch depth non-uniformity across the wafer, and etch profile.