No abstract

Signal transduction and activator of transcription (STAT) proteins are extracellular ligand-responsive transcription factors that mediate cell proliferation, apoptosis, differentiation, development and the immune response. Aberrant signals of STAT induce uncontrolled cell proliferation and apoptosis resistance and are strongly involved in cancer. STAT has been identified as a promising target for antitumor drugs, but to date most trials have not been successful. Here, we demonstrated that a novel STAT inhibitor, OPB-31121, strongly inhibited STAT3 and STAT5 phosphorylation without upstream kinase inhibition, and induced significant growth inhibition in various hematopoietic malignant cells. Investigation of various cell lines suggested that OPB-31121 is particularly effective against multiple myeloma, Burkitt lymphoma and leukemia harboring BCR–ABL, FLT3/ITD and JAK2 V617F, oncokinases with their oncogenicities dependent on STAT3/5. Using an immunodeficient mouse transplantation system, we showed the significant antitumor effect of OPB-31121 against primary human leukemia cells harboring these aberrant kinases and its safety for normal human cord blood cells. Finally, we demonstrated a model to overcome drug resistance to upstream kinase inhibitors with a STAT inhibitor. These results suggested that OPB-31121 is a promising antitumor drug. Phase I trials have been performed in Korea and Hong Kong, and a phase I/II trial is underway in Japan.

Hypoxia-inducible factor 1 (HIF-1) is involved in tumor progression/metastasis and activated in various cancers. Here we show that HIF-1A, which plays a major role in HIF-1 activation, is overexpressed in preneoplastic hepatocytic lesions from a very early stage during hepatocarcinogenesis in mice and man. Transcriptional targets of HIF-1, such as vascular endothelial growth factor, glut-1, c-met, and insulinlike growth factor II (IGF-II), were also overexpressed in mouse lesions. Oxygen tension within the lesions was not different from that of the normal hepatic tissues, indicating that HIF-1A expression was independent of hypoxia. On the other hand, Akt, the pathway of which can up-regulate HIF-1A expression, was activated in the mouse lesions, whereas HIF-1A was markedly down-regulated in the mouse hepatocellular carcinoma (HCC) cell lines after treatment with a phosphatidylinositol 3-kinase (PI3K) inhibitor, LY294002, indicating that HIF-1A expression is dependent on PI3K/Akt signaling. Conversely, HIF-1A knockdown by short interfering RNA in the HCC cell line resulted in decreased expression of activated Akt together with the HIF-1 target genes, indicating that Akt activation is reversely dependent on HIF-1 activation. Treating the HCC cells with IGF-II or epidermal growth factor (EGF) up-regulated both phospho-Akt and HIF-1A, whereas inhibition of IGF-II or EGF signaling down-regulated them both, suggesting that IGF-II and EGF can, at least in part, mediate the activation of Akt and HIF-1A. However, Akt was not activated by IGF-II or EGF in the HIF-1A knockdown cells, indicating that expression of the HIF-1 target genes is necessary for the Akt activation. These findings suggest that the reciprocal activation of PI3K/Akt signaling and HIF-1A may be important in the progression of hepatocarcinogenesis.

The acquisition of H. pylori infection occurs by close contact with infected individuals in early childhood, especially via contact with infected mothers and other infected children.

An intermediate insulator formation technique is realized using the concentration‐dependent oxidation (CDO) of the phosphorus‐doped first polysilicon gate. Utilizing the CDO effect, that is, heavily doped Si is oxidized faster than lightly doped Si, a thick intermediate oxide is formed to cover the first gate with its own oxide and a substrate surface to form the second gate oxide with simultaneous wet oxidation at 700°–900°C. Electrical properties of the intermediate insulator are discussed in terms of the formation conditions and topographical structures of the overlapped region. It is found that oxidation temperatures of around 900°C and moderate oxide thicknesses produce superior electrical properties and preferable geometries. In response to these requirements a dry‐wet‐dry oxidation (D‐W‐D) technique is successfully developed. A 5‐17‐5 min D‐W‐D oxidation at 900°C causes a 50 nm oxide to be formed on single crystal (100) silicon and a 210 nm oxide on the phosphorus‐doped polysilicon. The autodoping effect of phosphorus atoms incorporated in the polysilicon gate is also discussed. It gives rise to harmful threshold voltage lowerings for the second gate n‐channel transistors.