Epilayers of the previously hypothetical zinc-blende MnTe have been grown by molecular beam epitaxy. Epitaxial layers (0.5 μm thick) of MnTe were characterized using x-ray diffraction and transmission electron microscopy; optical reflectance measurements indicate a band gap of ∼3.2 eV. A series of strained single quantum well structures was fabricated with zinc-blende MnTe forming the barrier to CdTe quantum well regions; photoluminescence spectra indicate optical transitions corresponding to strong electron and hole confinement.

No abstract

No abstract

No abstract

Multilayer InSb/CdTe and InSb/MnTe heterostructures are grown by molecular beam epitaxy. The analysis of multilayer structures by transmission electron microscopy (TEM) and x-ray rocking curves confirms the presence of periodic heterointerfaces. TEM, x-ray, and x-ray photoelectron spectroscopy (XPS) measurements are found to provide a sensitive indicator for the presence of ultra-thin interfacial layers. Double barrier structures in the MnTe/InSb/MnTe configuration exhibit the negative differential resistance which is characteristic of resonant tunneling diodes.