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This paper presents the results of design and production of 8-th channel transceiver module (TRM) for advanced active electronically scanned antenna (AESA) radar applications. TRM operating frequency range ∆F = 9.2-10.4 GHz. Transmitting channel output power P out (Рвых) = 10 W. Receiving channel noise figure NF (Кш) ≤ 3,5 dB. Module features digital signal pre-processing.

Composites provide possibilities to combine the properties of different materials in order to obtain materials with the necessary parameters (low loss, absorbing, reflective materials, etc.). According to their structure, composite materials are conventionally divided into the microtextures and macrotextures. In turn, these materials may be passive or active. The properties of passive composite materials are invariable, and the properties of active ones can be altered using different effects: electric, magnetic, thermal, etc. In this article we present the results of theoretical and experimental investigations of various microwave dielectric-based composite structures. Particular attention is given to high-Q microwave structures with electrical control.

Al/nanocrystalline CeO x /Si/Al structures for heterojunction photodetectors A stable metal/nc-CeO x /Si structures were fabricated and investigated for the creation of heterojunction photodetectors. The photosensitivity of obtained structures in the visible range was 330 µA/lm•V. The value of the interface state density was of 7•10 10 cm-2 •eV-1. DC dielectric constant of nanocrystalline CeO x film was about 15. Thin (80 nm) cerium oxide films in Al/nc-CeO x /Si/Al structures were obtained by the vacuum flash evaporation method. The effect of technological factors on the CeO x films microstructure as well as on photoelectric properties of the Al/nc-CeO x /Si/Al structures has been investigated. Electrophysical and photoelectric properties of the Al/nc-CeO x /Si/Al structures has been investigated. It was revealed that the nanocrystalline CeO x layer in the obtained Al/nc-CeO x /Si/Al structures is a semiconductor with an electronic conductivity. It's volume resistivity is within the range of 0.5-30 МOhm•cm. Reference 9, figures 2.