We present the design of a 4.6 GHz LNA in TSMC 65nm with a feedback scheme to compensate for variations across process, supply voltage, and temperature. No post fabrication efforts are required in this compensation method. The proposed method improves the variation in S 21 of an inductively degenerated cascode LNA from 8.75% to 1.27%, which is a reduction in variation of 85%. The presented scheme is also robust over variations in supply voltage, temperature, and process conditions. The compensation method presented can be utilized to stabilize the gain of a wide variety of amplifiers.
This paper introduces the advanced compact MOSFET (ACM) model, a physically based model of the MOS transistor, derived from the long-channel transistor model presented in (1). The ACM model is composed of very simple expressions, is valid for any inversion level, conserves charge and preserves the source-drain symmetry of the transistor. Short-channel effects are included using a compact and physical approach. The performance of the ACM model in benchmark tests demonstrates its suitability for circuit simulation.
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