Subject c l a s s i f i c a t i o n : 16; 22.401 L a b o r a t o i r e s de Recherches Gdndrales de l a Compagnie Frangaise Thomson-Houston -Hotchkiss Brandt, Bagneux (a), and L a b o r a t o i r e C e n t r a l d e s I n d u s t r i e s h e c t r i q u e s , Fontenay-au-Roses (b) Two-Step Current S a t u r a t i o n i n CdS C r y s t a l s BY B. AUTIN (a), 0. C m N (a), E. DIEULESAINT (a), D. GOWERNELLE (a), J , TAVERNIER (b)' I, and P. BAUDUIN (b) observed and i n an independent manner at t h e L a b o r a t o r i e s of C.F,T.H.-H.B. and at t h e Laboratoire C e n t r a l d e s I n d u s t r i e s h e c t r i q u e s , phenomena s i m i l a r t o t h o s e r e p o r t e d by I s h i g u r oand Uchida ( I ) , i,e. corresponding two-step I(t) curves and

The high-pulsed-magnetic-field technique offers a convenient means for observing a large number of Faraday oscillations in a semiconductor, in the far infrared (10.6 p,m). The known values of the electron effective mass in InSb and GaAs are deduced from the period, but within the frame of the classical theory the decay of the oscillations as a function of the magnetic field is stronger than can be expected from dc conductivity and infrared absorption at the same frequency, in zero field. This is interpreted as due to a marked influence of the magnetic field on the relaxation. The preliminary results of a quantum-mechanical treatment are discussed.

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