A Bernas type ion source has been developed for Genus high energy ion implanters. The new source increases output by 50 YO and lifetime by 100 YO for boron applications, compared to the standard Genus PIG ion source. Up to 49 mA of total beam has been extracted from a BF, plasma through an aperture, 7.0 mm in diameter, and 14 mA of analyzed boron current ("B? has been obtained. This is equivalent to providing a 85 YO margin above the specified boron current for Genus 1510 implanters. In this paper, the source configuration, output performance and lifetime are presented.

Indirectly heated cathode ion sources have been developed for the VIISta 3000 and 810HP series ion implanters. The sources greatly increase lifetime and maintain or improve beam current output for all species and charge states. The sources are designed with common consumables. Source lifetime, beam current, stability, and tuning data are presented.

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