Bernas ion source for Genus Tandetron ion implanters

Sakase, T.; Maciejowski, P.E.; Leavitt, W.H.; Tokoro, N.

doi:10.1109/iit.1996.586376

Cited by 5 publications

(2 citation statements)

References 6 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…HVE's compact air-insulated medium energy accelerator system operates in a range of intermediate energies (100 keV to 500 keV) and is used for industrial applications like ion implantation. The standard ion source used in this system is a robust industrial design-Bernas ion source (Model 860) [4] regarded as an industry workhorse. It can produce intense beams of light and heavy ions ( 1 H to 197 Pt) from gas, vapor and sputter feed.…”

Section: Introductionmentioning

confidence: 99%

HVE ion sources for medium and high-energy accelerator systems

Annaluru,

Mous,

Walet

2024

J. Phys.: Conf. Ser.

View full text Add to dashboard Cite

Since decades, High Voltage Engineering (HVE) manufactures particle accelerator systems for research and industry. HVE’s product line includes Singletron and Tandetron accelerator systems with terminal voltages of up to 6 MV. They are dedicated to a wide range of applications including ion implantation and irradiation, Ion Beam Analysis (IBA), Accelerator Mass Spectrometry (AMS), and neutron reference fields. In this paper, we give an overview of the different positive and negative ion sources that are applied in these systems. We focus especially on the recent development and the performance of a compact 2.45 GHz permanent magnet ECR bipolar ion source (HVE Model SO-160), used for negative light-ion injection into tandem accelerators. It generates high-current, low-emittance light-ion beams at 30 keV energy. The novelty in the design of this ion source is that it combines direct negative extraction for H − with positive extraction for He + that is followed by charge exchange to He − in a Na-based electron donor canal. The source produces in excess of 250 eµA of H − and more than 20 eµA of He −. It is expected the design allows for substantially higher currents, especially for H −.

show abstract

Section: Introductionmentioning

confidence: 99%

HVE ion sources for medium and high-energy accelerator systems

Annaluru,

Mous,

Walet

2024

J. Phys.: Conf. Ser.

View full text Add to dashboard Cite

show abstract

“…Fig. 2-a shows a typical source glitch recovery on a G1520/Kestrel-750 implanter equipped with a Bernas ion source [2] when the recovery system was disabled. Fig.2-b shows a typical recovery with the recovery electronics enabled, In both figures Chl waveform shows the extraction Voltage read back, Ch2 waveform represents extraction current and Ch3 shows the anode Voltage of the ion source .…”

Section: A Arc Recovery Systemmentioning

confidence: 99%

Investigation of uniformity degradation by intentionally induced fast beam glitch with a disk-slot batch type endstation

Grezeszak¹,

Tokoro²,

Bowen³

et al.

1998 International Conference on Ion Implantation Technology. Proceedings (Cat. No.98EX144)

Self Cite

View full text Add to dashboard Cite

Genus Inc. has recently developed unique circuitry to annihilate a source plasma by reducing the anode Voltage of the ion source when a source glitch is detected (an arc recovery circuit). The use of this circuitry together with additional electronics enabled the introduction of artificial source glitches with time duration of 1 msec to 1.2 sec. at an arbitrary scan position triggered by a manual switch. In this work, a description of this instrument and the electrical measurements of source arc related phenomena are given. Actual measurements of uniformity degradation by intentionally induced beam glitches using this device have been performed as a function of scan numbers, duration of glitches with a disk-slot type batch endstation.

show abstract