Articles you may be interested inEffects of bias and temperature on the intersubband absorption in very long wavelength GaAs/AlGaAs quantum well infrared photodetectors J. Appl. Phys. 115, 124503 (2014); 10.1063/1.4869535 Photocurrent spectroscopy of intersubband transitions in GaInAsN/(Al)GaAs asymmetric quantum well infrared photodetectors J. Appl. Phys. 112, 084502 (2012); 10.1063/1.4754573 Correlation between the performance of double-barrier quantum-well infrared photodetectors and their microstructure: On the origin of the photovoltaic effect J. Appl. Phys. 98, 044510 (2005); 10.1063/1.2006990 Effect of Be doping on the absorption of InGaAs/AlGaAs strained quantum-well infrared photodetectors grown by molecular-beam epitaxy Appl. Phys. Lett. 74, 1570 (1999); 10.1063/1.123619 10-16 μm Broadband quantum well infrared photodetector

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