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As technology nodes continue to shrink, resistive opens have become increasingly difficult to detect using conventional methods such as AVC and PVC. The failure isolation method, Electron Beam Absorbed Current (EBAC) Imaging has recently become the preferred method in failure analysis labs for fast and highly accurate detection of resistive opens and shorts on a number of structures. This paper presents a case study using a two nanoprobe EBAC technique on a 28nm node test structure. This technique pinpointed the fail and allowed direct TEM lamella.

This paper introduces for the first time a new test structure for electromigration which allows increased statistics and reliability tests in a testchip under typical High TemperatureOperating Life experimental ranges. Following the electrical analysis, a large panel of failure analysis methodologies was suitably used to categorize defects such as size, location, resistance impact, etc. This thorough analysis allows us to confirm that silicon failures are accurately predicted by our electromigration checker, based on reliability design rules.

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