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Optical interconnects for use in high speed computing and communication systems require dense optoelectronic integrated circuits (OEICs). Monolithic integration of 111-V optoelectronics with VLSI-complexity electronics will yield OEICs of the high density, performance, manufacturability, and reliability. The Epitaxy-on-Electronics (EoE) technique monolithically integrates optoelectronic devices with commercially-fabricated, fully-metallized GaAs VLSI integrated circuits. This manuscript reviews the EoE process and details the fabrication of integrated LEDs. This LED-OEIC process is being used by optical interconnect systems researchers on a prototype basis through the OPTOCHIP project; the current status of this effort is reviewed.

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