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Optical interconnects for use in high speed computing and communication systems require dense optoelectronic integrated circuits (OEICs). Monolithic integration of 111-V optoelectronics with VLSI-complexity electronics will yield OEICs of the high density, performance, manufacturability, and reliability. The Epitaxy-on-Electronics (EoE) technique monolithically integrates optoelectronic devices with commercially-fabricated, fully-metallized GaAs VLSI integrated circuits. This manuscript reviews the EoE process and details the fabrication of integrated LEDs. This LED-OEIC process is being used by optical interconnect systems researchers on a prototype basis through the OPTOCHIP project; the current status of this effort is reviewed.

The temperature characteristics of bipolar cascade lasers operating up to 80 °C with room temperature, continuous-wave differential slope efficiencies of 93%, are reported. The continuous-wave characteristic lasing threshold temperature, T0, of the device is found to be 103 K for heatsink temperatures below 40 °C, dropping to 56 K for heatsink temperatures in the range 50–80 °C. Two separate regions are found to exist for the characteristic temperature of the differential slope efficiency, T1. The temperature of the topside metal contact versus bias was measured directly using a microthermocouple probe. Finite element modeling showed good agreement with measured surface temperatures. The simulations indicate that, prior to the onset of lasing in the bottom active region, nonradiative recombination heating in the bottom active region significantly heats the (lasing) top active region, leading to a reduction in the differential slope efficiency of the bipolar cascade laser.

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