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For future high performance logic semiconductor products it is essential to lower the dielectric constant k of the intra-and interlayer isolators in combination with Cu single and dual damascene metallisation (1, 2). In this paper we report on the first successful single and dual damascene integration of a porous Methylsilsesquioxane (MSQ) based spin-on dielectric, JSR LKD. Deposition, etch, resist strip, clean and CMP behaviour and electrical results from both single and dual damascene integration are discussed. JSRLKDOxide 2.3

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