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For future high performance logic semiconductor products it is essential to lower the dielectric constant k of the intra-and interlayer isolators in combination with Cu single and dual damascene metallisation (1, 2). In this paper we report on the first successful single and dual damascene integration of a porous Methylsilsesquioxane (MSQ) based spin-on dielectric, JSR LKD. Deposition, etch, resist strip, clean and CMP behaviour and electrical results from both single and dual damascene integration are discussed. JSRLKDOxide 2.3

The need for lower effective dielectric constants for both inter-and intra-layer dielectrics is clearly stated in the International Technology Roadmap for Semiconductors (I).Recently some progress has been reported with regards to integration and reliability assessment of these new, relatively weak porous ultra low-k materials (2-4). Due to their mechanical weakness, these materials also present 'unique challenges to the packaging process. If no appropriate precautions are taken, the pans cannot be packaged at all. In this paper first results are presented for packaging of a porous ultra low-k material with different integration schemes, employing three assembly iechniques: flip chip, gold ball bonding, and aluminum wedge bonding. All of these assembly techniques achieved good assembly yields when proper integration schemes were used.

The need for new low-k materials for interconnect dielectrics to meet the requirements stated in the International Technology Roadmap for Semiconductors ( I ) offers many new challenges to the etch and cleans processes. One significant challenge is the absorbance of process chemicals in open porous low-k films and incomplete removal of these contaminants. Porous low-k voiding is an integration issue recently addressed at International Sematech. This work proposes a mechanism of porous low-k voiding and an analytical technique to detect contamination in porous low-k films at sub 1% levels. Additionally, possible solutions to prevent low-k voiding are presented.