S. Skorobogatov and R. Anderson identified laser illumination as an effective technique to conduct fault attacks in 2002. In these early days of laser-induced fault injection, it was proven to be possible to inject single-bit faults into integrated circuits. This corresponds to the more restrictive fault model found in the fault attack bibliography. The target area under laser illumination (a few micrometers, down to ∼ 1 µm) broadly matched that of a single transistor. It was consistent with a singlebit fault model. However, since then the technology of secure devices has evolved. In current circuits even the smallest laser spots may illuminate several logic cells. This raises the question of the validity of the single-bit fault model: does it still hold? In this work, we report an assessment of its validity through experimental results obtained from circuits designed at the 28 nm CMOS technology node. We also describe the main properties of the corresponding fault model obtained from both static and dynamic experiments.

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At first used to emulate the effects of radioactive ionizing particules passing through integrated circuits (ICs), laser illumination is also used to inject faults into the computations of secure ICs for the purpose of retrieving secret data. The CMOS FD-SOI technology is expected to be less sensitive to laser faults injection than the more usual CMOS bulk technology. We report in this work an experimental assessment of the interest of using FD-SOI rather than CMOS bulk to decrease laser sensitivity. Our experiments were conducted on test chips at the 28 nm node for both technologies with laser pulse durations in the picosecond and nanosecond ranges.

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