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A fully-integrated series resonant class DE inverter is realized in a 130 nm 1.2 V CMOS technology with an on-chip spiral inductor and an integrated MIMcap. It is used as the first stage in fully-integrated class DE DC-DC resonant converters. The inherent soft switching yields high conversion efficiency at high switching frequencies. Low switching peakvoltages are present in the circuit, alleviating the need for onchip high-voltage techniques. The use of on-chip passives reduces the bill of materials (BOM) considerably. The maximum output power of the series resonant class DE inverter is 11.6 mW. The maximum power efficiency is 65.2 %. The measurement results confirm and improve previous simulations.

A technique for the optimization of fully-integrated inductive DC-DC converters is presented. An optimization framework is used to acquire an optimal converter, focusing on the onchip inductor as well as on the accurate layout-based modeling of temperature effects. For the inductor in inductive DC-DC converters, a tapered topology is introduced. A fully-integrated DC-DC boost converter is designed and optimized in a 0.13 µm CMOS technology. The power loss in the circuit is reduced with 27 % resulting in a 7 % efficiency improvement, compared to a fully-integrated DC-DC boost converter with a regular inductor topology.