Highly c-axis-oriented aluminum nitride (AlN) films were successfully prepared, without heating the substrate, on Y-128° LiNbO3 substrate by rf magnetron sputtering. The dependence of the sputtering pressure and the physical structures of the films (crystalline structure and micromorphology) were investigated. The results showed that the highly c-axis-oriented AlN films appeared at the lower sputtering pressures and the films with the best orientation and microstructure were prepared at 3 m Torr. The deposition rate also increased as the sputtering pressure decreased.

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To reach long operating time, Nonvolatile memory (NVM) has been applied to mobile systems in an attempt to reduce energy consumption through normally-off operation. The ReRAM device as a nonvolatile memory has shown promises in replacing current NVMs used in these applications, with orders of improvement in write speeds and read/write power than those offered by conventional Flash memories. Unfortunately, constraints related to endurance, read disturb, and resistance variations are still to be overcome for the wide usage of this device. This paper provides a review of the challenges and trends associated with the ReRAM circuits and applications used in mobile and cloud applications.

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